Microwave Power GaAs FET

Manufacturer's part number :


Manufacturer Toshiba

Toshiba - RF

Description :

The TIM1414-18L Microwave Power GaAs FET Amplifier from Toshiba has been optimised for broadband applications over the 14 to 14.5GHz frequency range. Featuring Low intermodulation distortion, high power (P1db=42.5dBm) and high gain (6dB) the TIM1414-18L has a maximum junction temperature of 175OC.

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  • High Power (P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz)
  • High Gain (G1dB = 7 dB at 9.5 GHz to 10.5 GHz)
  • Broad Band Internally Matched FET
  • Hermetically Sealed Package
Features Similar products
Type GaAs FET  

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Frequency Range (GHz) 14 to 14.5  
P1dB Output Power (dBm typ. @spec) 42.5  
G1dB Power Gain (dB) 6  
Power Added Efficiency (%) 28  
Channel Temperature (°C) 175  
Saturated Drain-Source Current @spec 10  
Thermal Resistance (°C/W max) 2.3