Microwave Power GaAs FET

Manufacturer's part number :


Manufacturer Toshiba

Toshiba - RF

Description :

The TIM0910-15L Microwave Power GaAs FET Amplifier from Toshiba has been optimised for broadband applications over the 9.5 to 10.5GHz frequency range. Featuring high power (P1db=42dBm) and high gain (7dB) the TIM0910-15L has a maximum junction temperature of 175OC.

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  • High Power (P1dB = 42 dBm at 9.5 GHz to 10.5 GHz)
  • High Gain (G1dB = 7 dB at 9.5 GHz to 10.5 GHz)
  • Broad Band Internally Matched FET
  • Hermetically Sealed Package
Features Similar products
Type GaAs FET  

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Frequency Range (GHz) 9.5 to 10.5  
P1dB Output Power (dBm typ. @spec) 42  
G1dB Power Gain (dB) 7  
Power Added Efficiency (%) 31  
Channel Temperature (°C) 175  
Saturated Drain-Source Current @spec 10  
Thermal Resistance (°C/W max) 2.5