Leistungsstarker Mikrowellen-GaAs-FET

Artikelnummer des Herstellers :


Hersteller Toshiba

Toshiba - RF

Beschreibung :

The TIM1414-18L Microwave Power GaAs FET Amplifier from Toshiba has been optimised for broadband applications over the 14 to 14.5GHz frequency range. Featuring Low intermodulation distortion, high power (P1db=42.5dBm) and high gain (6dB) the TIM1414-18L has a maximum junction temperature of 175OC.

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  • High Power (P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz)
  • High Gain (G1dB = 7 dB at 9.5 GHz to 10.5 GHz)
  • Broad Band Internally Matched FET
  • Hermetically Sealed Package