Leistungsstarker Mikrowellen-GaAs-FET

Artikelnummer des Herstellers :


Hersteller Toshiba

Toshiba - RF

Beschreibung :

The TIM0910-15L Microwave Power GaAs FET Amplifier from Toshiba has been optimised for broadband applications over the 9.5 to 10.5GHz frequency range. Featuring high power (P1db=42dBm) and high gain (7dB) the TIM0910-15L has a maximum junction temperature of 175OC.

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  • High Power (P1dB = 42 dBm at 9.5 GHz to 10.5 GHz)
  • High Gain (G1dB = 7 dB at 9.5 GHz to 10.5 GHz)
  • Broad Band Internally Matched FET
  • Hermetically Sealed Package